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Taoxin Chuangke HK
| ： | SI3900DV-T1-GE3 |
|---|---|
| ： | Transistors - FETs, MOSFETs - Arrays |
| ： | Vishay Siliconix |
| ： | MOSFET 2N-CH 20 |
| ： | - |
| ： | Tape & Reel (TR) Cut Tape (CT) |
| ： | - |
1
0.93
0.93
10
0.834
8.34
100
0.6504
65.04
500
0.53732
268.66
1000
0.4242
424.2
| TYPE | DESCRIPTION |
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 830mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
| Base Product Number | SI3900 |
